STMicroelectronics Demonstration Board Power Management for L6491 for N-Channel Power MOSFETs, IGBTs
STMicroelectronics Demonstration Board Power Management for L6491 for N-Channel Power MOSFETs, IGBTs
MPN:
RS-ID: SKU:196-1707
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Description
Product Type = Power Management Development Kit
For Use With = N-Channel Power MOSFETs, IGBTs
Kit Classification = Evaluation Board
Featured Device = L6491
Kit Name = Demonstration Board
Standards/Approvals = RoHS
The L6491 is a high voltage device manufactured with the BCD6 “;OFF-LINE”; technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs, with a 4 A sink and source current capability. The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing a microcontroller or DSP. An integrated comparator is available for fast overcurrent protection, and is also suited for other functions such overtemperature, etc. The EVAL6491HB board allows evaluating all of the L6491 features while driving a power switch with voltage rating up to 600 V in TO-220 or TO-247 packages. The board allows easily selecting and modifying the values of relevant external components in order to ease drivers performance evaluation under different applicative conditions and fine pre-tuning of final applications components.
Technical data
| Characteristic | Value |
|---|---|
| Power Management Function | Power Management |
| Product Type | Power Management Development Kit |
| For Use With | N-Channel Power MOSFETs, IGBTs |
| Kit Classification | Evaluation Board |
| Featured Device | L6491 |
| Kit Name | Demonstration Board |
| Standards/Approvals | RoHS |
Datasheet
Manufacturer
STMicroelectronics
Weight
99.000 G
Pack Size
1 unit = 1 units
Base Unit of Measure
PCE
Shipping
Expected availability from RS: currently unavailable

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