Microchip N-Channel MOSFET, 3 A Enhancement, 3-Pin TO-92 TP0606N3-G - pack size 10 units
Microchip N-Channel MOSFET, 3 A Enhancement, 3-Pin TO-92 TP0606N3-G - pack size 10 units
MPN:
RS-ID: SKU:177-9861
1010 in stock
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Description
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.Low threshold - 2.0V max. High input impedance Low input capacitance - 100pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
Technical data
| Characteristic | Value |
|---|---|
| Channel Type | N |
| Product Type | MOSFET |
| Maximum Continuous Drain Current Id | 3A |
| Package Type | TO-92 |
| Mount Type | Through Hole |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature | -55°C |
| Forward Voltage Vf | 1.8V |
| Maximum Power Dissipation Pd | 1W |
| Maximum Operating Temperature | 150°C |
| Standards/Approvals | No |
| Automotive Standard | No |
Datasheet
Manufacturer
Microchip
Weight
0.100 G
Pack Size
1 pack = 10 units
Base Unit of Measure
PCE
Shipping
2–3 days within Germany / 3–6 days within EU

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